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AC/DC AC/AC Hochvolt Konverter

  • Eingestellt 11.12.2008
  • Stand Kleinserie, Marktreif
  • Schutzart Patent erteilt
  • Gesucht Lizenznehmer, Vertrieb, Testkunden, Patentkäufer, Pressekontakte, Prototypenbau
  • Länder EU
 
 

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Beschreibung

IPM develops and patent grant DE10328937 a dual high power, high voltage, high frequency switching unit which works with hybrid drives, compact EMI safe semiconductor stages, supporting capacitors and high voltage ferrite transformers to generate extremely short HV pulses and sparking groups. Advantages are based on uses of standard circuit with extended semiconductors for e.g. nano, sub or micro perforation applications, corona treatments etc. IPM is looking for science or industrial partners who are interested in a licence agreement and/or technical cooperation for other wide application fields. IGBT, MOSFET, HVFET rf hv for nano micro technology.Industry application of electro or electrostatic perforation at fast running paper webs uses IGBT, MOSFET or HVFET semiconductor power stages. These circuits working as upward converters with extremely short time power pulses in ranges from 200 ns up to 15 µs, high current peaks up to 300 Amps by du/dt of 1500 Volt on a serial connected.

Problemstellung

Inductivity and loading condenser that the secondary ferrite transformer coils supply the sparking electrodes up to 50 Kilovolt as a permanent open loop and short circuit. A safety circuit logic and two hybrid drivers allows a alternately switching of semiconductor A/B which generating higher operation frequencies and power levels meanwhile the electrical thermal conditions remains on each in the same range as a single switching unit. In conclusion the approximately double frequency and power level operation obtains higher switching efficiencies, more perforation power or higher corona treatment level, depend of the industry application. Dual IGBT, HVFET or MOSFET semiconductors in high power, high current, high voltage circuits obtains in electrostatic nano, sub micro perforation

Lösung

Nano surface modifications, corona treatment or other switching application frequency up to 250 KHz, 1400 Volt, power levels up to 30 KW and more. Higher power efficiencies and harder switching periods are further advantages.
A controlled pulse timing into a certain time window with a constant or variable frequency generates hole sizes and hole sequences with high voltage sparking through the material webs. The repeating frequencies of the entire circuit can up to the double switching frequency of each semiconductor. For example by electrostatic perforation porosity ranges from 80 C.U. – 2500 C.U., paper web speeds up to 450 m/min and web widths up to 2000 mm are archive able. Corona treatment units, surface treatment, high power switching devices, power supplies, AC/DC drives, AC/DC.

Markt & Umfeld

The new dual semiconductor allows applications to build hybrid drives, semiconductor high-level stage, upward, downward or other converters or generators which operating with supporting capacitors, high voltage ferrite transformers in an extremely compact and modular way. Several advantages are the high efficiency of pulse power transmission and energy ratios. Traditional corona or other medium frequency generators up to 30 KHz operation range are easy to modify to double frequency and power levels. Patent grand for process and device DE10328937 of IGBT power switching unit. The electrostatic ESP nano or micro perforation in pore ranges from 10 nm up to 100 micron usually applies within ranges of the refinement of fine paper, packaging webs, bonded fabrics, non-woven, filter paper, bag.

 

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